Loading doc/usermanual/04_framework/05_fieldmaps.md +2 −2 Original line number Diff line number Diff line Loading @@ -16,7 +16,7 @@ pixels or fractions thereof to full sensor simulations in Allpix Squared. ## Mapping of Fields to the Sensor Plane \ *Examples for pixel geometries in field maps. The dark spot represents the pixel center, the red extend the electric field. *Examples for pixel geometries in field maps. The dark spot represents the pixel center, the red extent the electric field. Pixel boundaries are indicated with a dotted line where applicable.* Fields are always expected to be provided as rectangular maps, irrespective of the actual pixel shape. Loading doc/usermanual/06_models/05_impact_ionization.md +2 −2 Original line number Diff line number Diff line Loading @@ -33,7 +33,7 @@ The number of secondary charge carriers generated from impact ionization is calc This algorithm results in a mean number of secondaries generated equal to ```math <n_{total}> = \exp\left(\int_{x_0}^{x_n}\alpha(x)dx \right) \langle n_{total}\rangle = \exp\left(\int_{x_0}^{x_n}\alpha(x)dx \right) ``` for sufficiently low step sizes. Loading Loading @@ -187,7 +187,7 @@ $`T_0 = 300 \,\text{K}`$ as: \end{aligned} ``` ## Original publication ### Original publication The parameter values implemented in Allpix Squared are taken from Table 1 of \[[@okuto]\], using the values for silicon, as: Loading Loading
doc/usermanual/04_framework/05_fieldmaps.md +2 −2 Original line number Diff line number Diff line Loading @@ -16,7 +16,7 @@ pixels or fractions thereof to full sensor simulations in Allpix Squared. ## Mapping of Fields to the Sensor Plane \ *Examples for pixel geometries in field maps. The dark spot represents the pixel center, the red extend the electric field. *Examples for pixel geometries in field maps. The dark spot represents the pixel center, the red extent the electric field. Pixel boundaries are indicated with a dotted line where applicable.* Fields are always expected to be provided as rectangular maps, irrespective of the actual pixel shape. Loading
doc/usermanual/06_models/05_impact_ionization.md +2 −2 Original line number Diff line number Diff line Loading @@ -33,7 +33,7 @@ The number of secondary charge carriers generated from impact ionization is calc This algorithm results in a mean number of secondaries generated equal to ```math <n_{total}> = \exp\left(\int_{x_0}^{x_n}\alpha(x)dx \right) \langle n_{total}\rangle = \exp\left(\int_{x_0}^{x_n}\alpha(x)dx \right) ``` for sufficiently low step sizes. Loading Loading @@ -187,7 +187,7 @@ $`T_0 = 300 \,\text{K}`$ as: \end{aligned} ``` ## Original publication ### Original publication The parameter values implemented in Allpix Squared are taken from Table 1 of \[[@okuto]\], using the values for silicon, as: Loading