Merge branch 'gallium_nitride' into 'master' (eaffb08b) · Commits · XRFLab109 / Allpix Squared

AUTHORS.md

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		@@ -46,6 +46,7 @@ The following authors, in alphabetical order, have developed or contributed to A
		* Jihad Saidi, Université de Genève, [jisaidi](https://gitlab.cern.ch/jisaidi)
		* Andre Sailer, CERN, [sailer](https://gitlab.cern.ch/sailer)
		* Tasneem Saleem, Synchrotron SOLEIL, [TasneemSaleem](https://github.com/TasneemSaleem)
		* Arka Santra, Weizman Institute, [asantra](https://gitlab.cern.ch/asantra)
		* Enrico Jr. Schioppa, Unisalento and INFN Lecce, [schioppa](https://gitlab.cern.ch/schioppa)
		* Sebastian Schmidt, FAU Erlangen, [schmidtseb](https://github.com/schmidtseb)
		* Sanchit Sharma, Kansas State University, [SanchitKratos](https://github.com/SanchitKratos)

doc/latex/references.bib

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		@@ -950,3 +950,26 @@ author = {S. Croft and D.S. Bond}
		title = {Hexagonal Grids},
		url = {https://www.redblobgames.com/grids/hexagons/}
		}

		@article{Levinshtein,
		title = {Carrier mobility model for GaN},
		journal = {Solid-State Electronics},
		volume = {47},
		number = {1},
		pages = {111-115},
		year = {2003},
		issn = {0038-1101},
		doi = {https://doi.org/10.1016/S0038-1101(02)00256-3},
		url = {https://www.sciencedirect.com/science/article/pii/S0038110102002563},
		author = {Tigran T Mnatsakanov and Michael E Levinshtein and Lubov I Pomortseva and Sergey N Yurkov and Grigory S Simin and M {Asif Khan}},
		keywords = {Gallium nitride, Low-field mobility}
		}

		@phdthesis{GaN_Creation_Fano,
		author = {Padhraic Liam Mulligan},
		title = {Fabrication and Characterization of Gallium Nitride Schottky Diode Devices for Determination of Electron-hole Pair Creation Energy and Intrinsic Neutron Sensitivity},
		school = {Ohio State University. Department of Mechanical Engineering},
		year = 2015,
		url={https://etd.ohiolink.edu/apexprod/rws_etd/send_file/send?accession=osu1448405475},
		publisher={Ohio State University}
		}

doc/usermanual/05_models/01_material_properties.md

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		@@ -25,6 +25,7 @@ composition and of vendors. The sources for the chosen default values are provid
		\| Silicon \| 3.64 \| 0.115 \| \[[@chargecreation], [@fano]\] \|
		\| Germanium \| 2.97 \| 0.112 \| \[[@Germanium_Creation_Fano]\] \|
		\| Gallium Arsenide \| 4.2 \| 0.14 \| \[[@GaAs_Fano]\] \|
		\| Gallium Nitride \| 8.33 \| 0.07 \| \[[@GaN_Creation_Fano]\] \|
		\| Cadmium Telluride \| 4.43 \| 0.24 \| \[[@CdTe_Creation], [@CdTe_Fano]\] \|
		\| Cadmium Zinc Telluride ($`\ce{Cd_{0.8}Zn_{0.2}Te}`$) \| 4.6 \| 0.14 \| \[[@CdZnTe_Creation], [@CdZnTe_Fano]\] \|
		\| Diamond \| 13.1 \| 0.382 \| \[[@Diamond_Creation_Fano]\] \|
		@@ -40,6 +41,7 @@ respective module.
		[@fano]: https://doi.org/10.1103/PhysRevB.22.5565
		[@Germanium_Creation_Fano]: https://doi.org/10.1016/0883-2889(91)90002-I
		[@GaAs_Fano]: https://doi.org/10.1063/1.1406546
		[@GaN_Creation_Fano]:https://etd.ohiolink.edu/apexprod/rws_etd/send_file/send?accession=osu1448405475
		[@CdTe_Creation]: https://doi.org/10.1016/0029-554X(74)90662-4
		[@CdTe_Fano]: https://doi.org/10.1016/j.nima.2018.09.025
		[@CdZnTe_Creation]: https://doi.org/10.1016/j.astropartphys.2021.102563

doc/usermanual/05_models/02_carrier_mobility.md

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		\| \| $`M\ [\text{cm}^2\,\text{K}^\gamma\,\text{V}^{-1}\,\text{s}^{-1}]`$ \| $` 2.5\times 10^6`$ \| $` 6.3\times 10^7`$ \| \[[@LandoltBornstein]\] \|
		\| \| $`\gamma`$ \| $` 1.0`$ \| $` 2.1`$ \| \[[@LandoltBornstein]\] \|

		## Levinshtein Mobility

		The Levinshtein mobility model describes the mobility of electron and holes in Gallium Nitride. The publication \[[@Levinshtein]\] models the electron and hole mobilities as a function of doping concentration and temperature. The temperature dependent model follows the relation

		```math
		\begin{aligned}
		\mu_e (T, N) &= \frac{\mu_{max,e}}{\frac{1}{B_e(N) \left(T/T_0\right)^{\beta_e}} + \left(\frac{T}{T_0}\right)^{\alpha_e}} \\
		\mu_h (T, N) &= \frac{\mu_{max,h}}{\frac{1}{B_h(N)} + \left(\frac{T}{T_0}\right)^{\alpha_h}} \\
		B_{i} (N) &= \left[ \frac{\mu_{min,i}+\mu_{max,i}\left(\frac{N_{ref,i}}{N}\right)^{\gamma_i}}{\mu_{max,i}-\mu_{min,i}} \right]\bigg\rvert_{T=T_0}
		\end{aligned}
		```

		as taken from equations 6 and 7. The following parameters in use are taken from tables 1 and 2 in the reference publication:

		```math
		\begin{aligned}
		\mu\_{max,e} &= 1000 \,\text{cm}^2\,\text{V}^{-1}\,\text{s}^{-1} \\
		\mu\_{min,e} &= 55 \,\text{cm}^2\,\text{V}^{-1}\,\text{s}^{-1} \\
		N_{ref,e} &= 2 \times 10^17 \\
		\alpha_e &= 2.0 \\
		\beta_e &= 0.7 \\
		\gamma_e &= 1.0 \\
		\mu\_{max,h} &= 170 \,\text{cm}^2\,\text{V}^{-1}\,\text{s}^{-1} \\
		\mu\_{min,h} &= 3 \,\text{cm}^2\,\text{V}^{-1}\,\text{s}^{-1} \\
		N_{ref,h} &= 3 \times 10^17 \\
		\alpha_h &= 5.0 \\
		\gamma_h &= 2.0
		\end{aligned}
		```

		This model can be selected in the configuration file via the parameter `mobility_model = "levinshtein"`.

		## Constant Mobility

		Some simulations require constant charge carrier mobility values $`\mu = \text{const}`$. This can be simulated with this
		@@ -395,4 +427,5 @@ all corresponding features, mathematical expressions and constants.
		[@quay]: https://doi.org/10.1016/S1369-8001(00)00015-9
		[@omar]: https://doi.org/10.1016/0038-1101(87)90063-3
		[@LandoltBornstein]: https://doi.org/10.1007/b80447
		[@Levinshtein]: https://doi.org/10.1016/S0038-1101(02)00256-3
		[@rootformula]: https://root.cern.ch/doc/master/classTFormula.html

src/core/geometry/DetectorModel.hpp

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		CADMIUM_ZINC_TELLURIDE, ///< Cadmium Zinc Telluride
		DIAMOND, ///< Diamond
		SILICON_CARBIDE, ///< Silicon Carbide
		GALLIUM_NITRIDE, ///< Gallium Nitride
		};

		/**