Materials: minor rephrase in doc

\end{align}

with the saturation velocity at $T=\SI{300}{K}$ and the free parameter $A$.

In \apsq  the mobility is determined according to a model published in~\cite{omar} as a function of the saturation velocity $v_{sat}$, the electrical field $E$ and the critical field $E_C$:

In \apsq  the mobility is determined according to a model published in~\cite{omar}, as a function of the saturation velocity $v_{sat}$, the electrical field $E$ and the critical field $E_C$:

\begin{align}

  \label{eq:mob:quay_mob}

  \mu_e\left(E\right) &= \frac{v_{sat}}{E_C \cdot \sqrt{ 1 + \left( E/E_C \right)^2 }} .

\end{align}

The critical temperature in turn is defined as the saturation velocity divided by the mobility at zero field, where the zero-field mobility scales with temperature according to~\cite{omar}:

The critical field in turn is defined as the saturation velocity divided by the mobility at zero field, where the zero-field mobility scales with temperature according to~\cite{omar}:

\begin{align}

  \label{eq:mob:ec}

  E_C(T) = \frac{v_{sat}}{M T^{-\gamma}} .

\end{align}

To date, the model has been implemented for silicon, germanium and gallium arsenide.

The model has been implemented for silicon, germanium and gallium arsenide.

Parameters for several other compound semiconductors are given in~\cite{quay} and~\cite{LandoltBornstein}.

The parameters implemented in \apsq are listed in Table~\ref{tab:mob:quay}

The parameters implemented in \apsq and their references are listed in Table~\ref{tab:mob:quay}

\begin{table}[tbp]

\caption{List of parameters for the Quay mobility model.}

\label{tab:mob:quay}