\apsq implements a variety of models to describe the physics of semiconductor detectors.
These models are implemented module-independently and can be selected via configuration parameters in the respective models.
This chapter serves as central reference for the different models.
\apsq stores and implements a variety of properties and models to describe the physics of semiconductor detectors.
Models are implemented module-independently and can be selected via configuration parameters in the respective models, while sensor material properties serve as a default to module parameters and can be overwritten in the respective configuration section.
This chapter serves as central reference for the different properties and models.
\section{Sensor Material Properties}
\label{sec:material_properties}
\apsq supports the definition of a variety of semiconductor sensor materials.
To simplify the setup of simulations with certain materials and to avoid inconclusive results, a set of default material properties is defined for each available material.
These stored values serve as defaults to modules depending on one of these properties and may thus be overwritten using the corresponding configuration key in the respective section of the main configuration file.
These values are currently implemented:
\begin{itemize}
\item Charge creation energy
\item Fano factor
\end{itemize}
The values for various materials are listed in Table~\ref{tab:material_properties}.
It should be noted that for many of the following values, contradictive measurements exist throughout literature, thus the sources of the values are provided in the following.
\begin{table}[tbp]
\caption{List of default sensor material properties implemented in \apsq}
\label{tab:material_properties}
\centering
\begin{tabular}{lll}
\toprule
\textbf{Material}&\textbf{Charge Creation Energy [eV]}&\textbf{Fano factor}\\
It should be noted that material properties such as the density and composition of materials are defined only in case of constructing a Geant4 geometry via the module GeometryConstructionGeant4, therefore these values are implemented within the respective module.
author={Tang, J. and Kislat, F. and Krawczynski, H.},
year={2021},
month={Mar},
pages={102563}
}
@article{Diamond_Creation_Fano,
author={Shimaoka, Takehiro and Kaneko, Junichi H. and Sato, Yuki and Tsubota, Masakatsu and Shimmyo, Hiroaki and Chayahara, Akiyoshi and Watanabe, Hideyuki and Umezawa, Hitoshi and Mokuno, Yoshiaki},
title={Fano factor evaluation of diamond detectors for alpha particles},
author={Giuseppe Bertuccio and Stefano Caccia and Donatella Puglisi and Daniele Macera},
}
@article{GaAs_Fano,
author={Owens, Alan and Bavdaz, Marcos and Peacock, A. and Poelaert, A. and Andersson, Hans and Nenonen, Seppo and Sipilä, Heikki and Tro¨ger, L. and Bertuccio, Giuseppe},
year={2001},
month={11},
pages={5376},
title={High resolution x-ray spectroscopy using GaAs arrays},
