@@ -15,6 +15,8 @@ It is not used for the calculation of the electric field inside the sensor.
The profile is extrapolated along `z` such that if a position outside the sensor is queried, the last value available at the sensor surface is returned.
This precludes edge effects from charge carriers moving at the sensor surfaces.
The designation of the dopants follows the common practice of assigning negative values to p-doped silicon and positive values to n-doped silicon.
The following models for the doping profile can be used:
* For **constant**, a constant doping profile is set in the sensor
