Loading doc/usermanual/chapters/models.tex +8 −8 Original line number Diff line number Diff line Loading @@ -26,21 +26,21 @@ The sources for the chosen default values are provided in the table. \caption{List of default sensor material properties implemented in \apsq} \label{tab:material_properties} \centering \begin{tabular}{lll} \begin{tabular}{llll} \toprule \textbf{Material} & \textbf{Charge Creation Energy [eV]} & \textbf{Fano factor} \\ \textbf{Material} & \shortstack[l]{\textbf{Charge Creation}\\\textbf{Energy [eV]}} & \textbf{Fano factor} & \textbf{Sources} \\ \midrule Silicon & 3.64~\cite{chargecreation} & 0.115~\cite{fano} \\ Silicon & 3.64 & 0.115 & \cite{chargecreation}, \cite{fano} \\ \midrule Gallium Arsenide & 4.2 & 0.14~\cite{GaAs_Fano} \\ Gallium Arsenide & 4.2 & 0.14 & \cite{GaAs_Fano} \\ \midrule Cadmium Telluride & 4.43~\cite{DABROWSKI1974531} & 0.24~\cite{SAMMARTINI2018168} \\ Cadmium Telluride & 4.43 & 0.24 & \cite{DABROWSKI1974531}, \cite{SAMMARTINI2018168} \\ \midrule Cadmium Zinc Telluride \ce{Cd_{0.8}Zn_{0.2}Te} & 4.6~\cite{CdZnTe_Creation} & 0.14~\cite{cdznte} \\ Cadmium Zinc Telluride \ce{Cd_{0.8}Zn_{0.2}Te} & 4.6 & 0.14 & \cite{CdZnTe_Creation}, \cite{cdznte} \\ \midrule Diamond & 13.1~\cite{Diamond_Creation_Fano} & 0.382~\cite{Diamond_Creation_Fano} \\ Diamond & 13.1 & 0.382 & \cite{Diamond_Creation_Fano}, \cite{Diamond_Creation_Fano} \\ \midrule Silicon Carbide (4H-SiC) & 7.6~\cite{SiC_Creation} & 0.1~\cite{SiC_Fano} \\ Silicon Carbide (4H-SiC) & 7.6 & 0.1 & \cite{SiC_Creation}, \cite{SiC_Fano} \\ \bottomrule Loading Loading
doc/usermanual/chapters/models.tex +8 −8 Original line number Diff line number Diff line Loading @@ -26,21 +26,21 @@ The sources for the chosen default values are provided in the table. \caption{List of default sensor material properties implemented in \apsq} \label{tab:material_properties} \centering \begin{tabular}{lll} \begin{tabular}{llll} \toprule \textbf{Material} & \textbf{Charge Creation Energy [eV]} & \textbf{Fano factor} \\ \textbf{Material} & \shortstack[l]{\textbf{Charge Creation}\\\textbf{Energy [eV]}} & \textbf{Fano factor} & \textbf{Sources} \\ \midrule Silicon & 3.64~\cite{chargecreation} & 0.115~\cite{fano} \\ Silicon & 3.64 & 0.115 & \cite{chargecreation}, \cite{fano} \\ \midrule Gallium Arsenide & 4.2 & 0.14~\cite{GaAs_Fano} \\ Gallium Arsenide & 4.2 & 0.14 & \cite{GaAs_Fano} \\ \midrule Cadmium Telluride & 4.43~\cite{DABROWSKI1974531} & 0.24~\cite{SAMMARTINI2018168} \\ Cadmium Telluride & 4.43 & 0.24 & \cite{DABROWSKI1974531}, \cite{SAMMARTINI2018168} \\ \midrule Cadmium Zinc Telluride \ce{Cd_{0.8}Zn_{0.2}Te} & 4.6~\cite{CdZnTe_Creation} & 0.14~\cite{cdznte} \\ Cadmium Zinc Telluride \ce{Cd_{0.8}Zn_{0.2}Te} & 4.6 & 0.14 & \cite{CdZnTe_Creation}, \cite{cdznte} \\ \midrule Diamond & 13.1~\cite{Diamond_Creation_Fano} & 0.382~\cite{Diamond_Creation_Fano} \\ Diamond & 13.1 & 0.382 & \cite{Diamond_Creation_Fano}, \cite{Diamond_Creation_Fano} \\ \midrule Silicon Carbide (4H-SiC) & 7.6~\cite{SiC_Creation} & 0.1~\cite{SiC_Fano} \\ Silicon Carbide (4H-SiC) & 7.6 & 0.1 & \cite{SiC_Creation}, \cite{SiC_Fano} \\ \bottomrule Loading
