@@ -20,7 +20,7 @@ To simulate impact ionization, the number of newly generated electron-hole pairs
The two parameters `propagate_electrons` and `propagate_holes` allow to control which type of charge carrier is propagated to their respective electrodes. Either one of the carrier types can be selected, or both can be propagated. It should be noted that this will slow down the simulation considerably since twice as many carriers have to be handled and it should only be used where sensible.
The direction of the propagation depends on the electric and magnetic fields field configured, and it should be ensured that the carrier types selected are actually transported to the implant side. For linear electric fields, a warning is issued if a possible misconfiguration is detected.
A fourth-order Runge-Kutta-Fehlberg method \[[@fehlberg]\] with fifth-order error estimation is used to integrate the particle propagation in the electric and magnetic fields. After every Runge-Kutta step, the diffusion is accounted for by applying an offset drawn from a Gaussian distribution calculated from the Einstein relation
A fourth-order Runge-Kutta-Fehlberg method \[[@fehlberg], [@fehlberg2]\] with fifth-order error estimation, RKF4(5), is used to integrate the particle propagation in the electric and magnetic fields. After every Runge-Kutta step, the diffusion is accounted for by applying an offset drawn from a Gaussian distribution calculated from the Einstein relation
@@ -16,7 +16,7 @@ The propagation consists of a combination of drift and diffusion simulation. The
This module implements charge multiplication by impact ionization. The multiplication model can be chosen using the `multiplication_model` parameter, the list of available models can be found in the user manual. By default, the model defaults to `none` and impact ionization is switched off, generating unity gain.
To simulate impact ionization, the number of newly generated electron-hole pairs is calculated for every propagation step and every charge carrier in the group, based on drawing a random number from a geometric distribution. This represents a stepwise approach to the avalanche generation process. The charge of a charge group is increased by the number of impact ionization processes per step and opposite-type charge carriers are generated at the end of the step.
A fourth-order Runge-Kutta-Fehlberg method \[[@fehlberg]\] is used to integrate the particle motion through the electric and magnetic fields. After every Runge-Kutta step, the diffusion is accounted for by applying an offset drawn from a Gaussian distribution calculated from the Einstein relation
A classic fourth-order Runge-Kutta method is used to integrate the particle motion through the electric and magnetic fields. After every Runge-Kutta step, the diffusion is accounted for by applying an offset drawn from a Gaussian distribution calculated from the Einstein relation