Loading src/modules/GenericPropagation/tests/13-impact-ionization.conf +1 −1 Original line number Diff line number Diff line Loading @@ -30,4 +30,4 @@ multiplication_threshold = 100kV/cm propagate_electrons = true propagate_holes = true #PASS Calculated gain of 1.10271 for step of 106.677nm from field of 186.529kV/cm to 186.646kV/cm #PASS Calculated local gain of 1.00116 for step of 106.676nm from field of 186.385kV/cm to 186.547kV/cm src/modules/GenericPropagation/tests/15-impact-secondary.conf +1 −1 Original line number Diff line number Diff line Loading @@ -30,4 +30,4 @@ multiplication_threshold = 100kV/cm propagate_electrons = true propagate_holes = true #PASS Set of charge carriers ("h") from gain on (446.377um,217.437um,196.627um) #PASS Set of charge carriers ("h") generated from impact ionization on (447.286um,217.696um,165.847um) src/modules/TransientPropagation/tests/13-impact-ionization.conf +1 −1 Original line number Diff line number Diff line Loading @@ -31,4 +31,4 @@ timestep = 1ps multiplication_model = "okuto" multiplication_threshold = 100kV/cm #PASS Calculated integrated gain of 1.49596 (local gain: 1.00029) for step of 106.418nm from field of 170.6kV/cm to 170.6kV/cm #PASS Calculated local gain of 1.00029 for step of 106.418nm from field of 170.599kV/cm to 170.6kV/cm src/modules/TransientPropagation/tests/15-impact-secondary.conf +1 −1 Original line number Diff line number Diff line Loading @@ -31,4 +31,4 @@ timestep = 1ps multiplication_model = "okuto" multiplication_threshold = 100kV/cm #PASS Set of charge carriers ("h") from gain on (445.748um,219.454um,98.908um) No newline at end of file #PASS Set of charge carriers ("h") generated from impact ionization on (444.972um,219.825um,77.55um) No newline at end of file Loading
src/modules/GenericPropagation/tests/13-impact-ionization.conf +1 −1 Original line number Diff line number Diff line Loading @@ -30,4 +30,4 @@ multiplication_threshold = 100kV/cm propagate_electrons = true propagate_holes = true #PASS Calculated gain of 1.10271 for step of 106.677nm from field of 186.529kV/cm to 186.646kV/cm #PASS Calculated local gain of 1.00116 for step of 106.676nm from field of 186.385kV/cm to 186.547kV/cm
src/modules/GenericPropagation/tests/15-impact-secondary.conf +1 −1 Original line number Diff line number Diff line Loading @@ -30,4 +30,4 @@ multiplication_threshold = 100kV/cm propagate_electrons = true propagate_holes = true #PASS Set of charge carriers ("h") from gain on (446.377um,217.437um,196.627um) #PASS Set of charge carriers ("h") generated from impact ionization on (447.286um,217.696um,165.847um)
src/modules/TransientPropagation/tests/13-impact-ionization.conf +1 −1 Original line number Diff line number Diff line Loading @@ -31,4 +31,4 @@ timestep = 1ps multiplication_model = "okuto" multiplication_threshold = 100kV/cm #PASS Calculated integrated gain of 1.49596 (local gain: 1.00029) for step of 106.418nm from field of 170.6kV/cm to 170.6kV/cm #PASS Calculated local gain of 1.00029 for step of 106.418nm from field of 170.599kV/cm to 170.6kV/cm
src/modules/TransientPropagation/tests/15-impact-secondary.conf +1 −1 Original line number Diff line number Diff line Loading @@ -31,4 +31,4 @@ timestep = 1ps multiplication_model = "okuto" multiplication_threshold = 100kV/cm #PASS Set of charge carriers ("h") from gain on (445.748um,219.454um,98.908um) No newline at end of file #PASS Set of charge carriers ("h") generated from impact ionization on (444.972um,219.825um,77.55um) No newline at end of file
