Manual: document temperature scaling of SRH lifetime (341f26bd) · Commits · XRFLab109 / Allpix Squared

doc/usermanual/chapters/models.tex

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		@@ -302,6 +302,12 @@ The parameter values implemented in \apsq are taken from~\cite{fossum} as:
		\end{split}
		\end{equation*}

		The temperature dependence of the Shockley-Read-Hall lifetime is scaled following the model presented in~\cite{schenk} as:

		\begin{equation}
		\tau(N, T) = \tau(N) \left( \frac{\SI{300}{K}}{T} \right)^{3/2}
		\end{equation}

		This model can be selected in the configuration file via the parameter \parameter{recombination_model = "srh"}.

		\subsection{Auger Recombination}

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		@@ -526,6 +526,30 @@ month={Aug},
		author = "Jerry G. Fossum",
		}

		@article{FOSSUM1983569,
		title = {Carrier recombination and lifetime in highly doped silicon},
		journal = {Solid-State Electronics},
		volume = {26},
		number = {6},
		pages = {569-576},
		year = {1983},
		issn = {0038-1101},
		doi = {https://doi.org/10.1016/0038-1101(83)90173-9},
		author = {J.G. Fossum and R.P. Mertens and D.S. Lee and J.F. Nijs},
		}
		@article{schenk,
		title = {A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon},
		journal = {Solid-State Electronics},
		volume = {35},
		number = {11},
		pages = {1585-1596},
		year = {1992},
		issn = {0038-1101},
		doi = {https://doi.org/10.1016/0038-1101(92)90184-E},
		url = {https://www.sciencedirect.com/science/article/pii/003811019290184E},
		author = {A. Schenk},
		}

		@article{haug,
		title = "Auger coefficients for highly doped and highly excited semiconductors",
		journal = "Solid State Communications",