author={R. Ballabriga and J. Braach and E. Buschmann and M. Campbell and D. Dannheim and K. Dort and L. Huth and I. Kremastiotis and J. Kröger and L. Linssen and M. Munker and P. Schütze and W. Snoeys and S. Spannagel and T. Vanat},
}
@article{rd50ionization,
title={Study of impact ionization coefficients in silicon with Low Gain Avalanche Diodes},
@@ -39,6 +39,8 @@ While $`A`$ is assumed to be temperature-independent, parameter $`B`$ exhibits a
B(T) = C + D \cdot T.
```
### Original publication
The parameter values implemented in Allpix Squared are taken from Section 3 of \[[@massey]\] as:
```math
@@ -57,6 +59,26 @@ for electrons and holes, respectively.
This model can be selected in the configuration file via the parameter `multiplication_model = "massey"`.
### Optimized parameters
An optimized parametrization of the Massey model based on measurements with an infrared laser is implemented in Allpix Squared, based on Table 2 of \[[@rd50ionization]\] with the values:
```math
\begin{aligned}
A_{e} &= 1.186\times 10^{6} \,\text{/cm}\\
C_{e} &= 1.020\times 10^{6} \,\text{V/cm}\\
D_{e} &= 1.043\times 10^{3} \,\text{V/cm/K}\\
\\
A_{h} &= 2.250\times 10^{6} \,\text{/cm}\\
C_{h} &= 1.851\times 10^{6} \,\text{V/cm}\\
D_{h} &= 1.828\times 10^{3} \,\text{V/cm/K}\\
\end{aligned}
```
for electrons and holes, respectively.
This model can be selected in the configuration file via the parameter `multiplication_model = "massey_optimized"`.
## Van Overstraeten-De Man Model
@@ -81,11 +103,15 @@ Temperature scaling of the ionization coefficient is performed via the $`\gamma(
The value of the reference temperature $`T_0`$ is not entirely clear as it is never stated explicitly, a value of
$`T_0 = 300 \,\text{K}`$ is assumed. The other parameter values implemented in Allpix Squared are taken from the abstract
with $`\hbar \omega_{op} = 0.063 \,\text{eV}`$ and the Boltzmann constant $`k_{\mathrm{B}} = 8.6173\times 10^{-5} \,\text{eV/K}`$. The value of the reference temperature $`T_0`$ is not entirely clear as it is never
stated explicitly, a value of $`T_0 = 300 \,\text{K}`$ is assumed.
### Original publication
The other model parameter values implemented in Allpix Squared are taken from the abstract
of \[[@overstraeten]\] as:
```math
@@ -103,6 +129,29 @@ of \[[@overstraeten]\] as:
This model can be selected in the configuration file via the parameter `multiplication_model = "overstraeten"`.
### Optimized parameters
An optimized parametrization of the Van Overstraeten-De Man model based on measurements with an infrared laser is implemented in Allpix Squared, based on Table 3 of \[[@rd50ionization]\] with the following parameter values:
In contrast to the original model, this publication uses a parametrization without differentiating between low and high field regions, hence only one parameter value is provided for each of $`a_{\infty, h}`$ and $`b_{h}`$.
This model can be selected in the configuration file via the parameter `multiplication_model = "overstraeten_optimized"`.
## Okuto-Crowell Model
The Okuto-Crowell model \[[@okuto]\] defines the impact ionization coefficient similarly to the above models but in addition
@@ -122,6 +171,8 @@ $`T_0 = 300 \,\text{K}`$ as:
\end{aligned}
```
## Original publication
The parameter values implemented in Allpix Squared are taken from Table 1 of \[[@okuto]\], using the values for silicon, as:
```math
@@ -131,7 +182,7 @@ The parameter values implemented in Allpix Squared are taken from Table 1 of \[[
b_{300, e} &= 4.81\times 10^{5} \,\text{V/cm}\\
d_{e} &= 6.86\times 10^{-4}\\
\\
a_{300, h} &= 0.243 \,\text{/cm}\\
a_{300, h} &= 0.243 \,\text{/V}\\
c_{h} &= 5.35\times 10^{-4}\\
b_{300, h} &= 6.53\times 10^{5} \,\text{V/cm}\\
d_{h} &= 5.67\times 10^{-4}\\
@@ -140,6 +191,28 @@ The parameter values implemented in Allpix Squared are taken from Table 1 of \[[
This model can be selected in the configuration file via the parameter `multiplication_model = "okuto"`.
### Optimized parameters
An optimized parametrization of the Okuto-Crowell model based on measurements with an infrared laser is implemented in Allpix Squared, based on Table 4 of \[[@rd50ionization]\] with the following parameter values:
```math
\begin{aligned}
a_{300, e} &= 0.289 \,\text{/V}\\
c_{e} &= 9.03\times 10^{-4}\\
b_{300, e} &= 4.01\times 10^{5} \,\text{V/cm}\\
d_{e} &= 1.11\times 10^{-3}\\
\\
a_{300, h} &= 0.202 \,\text{/V}\\
c_{h} &= -2.20\times 10^{-3}\\
b_{300, h} &= 6.40\times 10^{5} \,\text{V/cm}\\
d_{h} &= 8.25\times 10^{-4}\\
\end{aligned}
```
This model can be selected in the configuration file via the parameter `multiplication_model = "okuto_optimized"`.
## Bologna Model
The Bologna model \[[@bologna]\] describes impact ionization for experimental data in an electric field range from
@@ -233,6 +306,7 @@ supports all corresponding features, mathematical expressions and constants.