-DesignTarget: cache

-CacheAccessMode: Normal
-Associativity (for cache only): 8

-ProcessNode: 32

-Capacity (KB): 128
-WordWidth (bit): 128

-DeviceRoadmap: HP

-LocalWireType: LocalAggressive
-LocalWireRepeaterType: RepeatedNone
-LocalWireUseLowSwing: No

-GlobalWireType: GlobalAggressive
-GlobalWireRepeaterType: RepeatedNone
-GlobalWireUseLowSwing: No

//-Routing: H-tree
-Routing: Non-H-tree

-InternalSensing: true

-MemoryCellInputFile: sample_3D_eDRAM.cell

-Temperature (K): 380
-RetentionTime (us): 40

//-OptimizationTarget: Area
//-OptimizationTarget: WriteLatency
//-OptimizationTarget: Full
-OptimizationTarget: WriteEDP

-EnablePruning: Yes

-BufferDesignOptimization: latency

//-ForceBank3D (Total AxBxC, Active DxE): 64x4x2, 1x1
//-ForceBank (Total AxB, Active CxD): 64x4, 1x1
//-ForceMat (Total AxB, Active CxD): 2x2, 2x2
//-ForceMuxSenseAmp: 128
//-ForceMuxOutputLev1: 1 
//-ForceMuxOutputLev2: 1

-StackedDieCount: 2
//-PartitionGranularity: 1
//-LocalTSVProjection: 0
//-GlobalTSVProjection: 0
//-TSVRedundancy 1.2